Partnering analytic models and dynamic secondary ion mass spectrometry simulations to interpret depth profiles due to kiloelectronvolt cluster bombardment.

نویسندگان

  • Robert J Paruch
  • Barbara J Garrison
  • Zbigniew Postawa
چکیده

The analytical steady-state statistical sputtering model (SS-SSM) is utilized to interpret molecular dynamics (MD) simulations of depth profiling of Ag solids with keV cluster beams of C(60) and Au(3) under different incident energy and angle conditions. Specifically, the results of the MD simulations provide the input to the SS-SSM and the result is a depth profile of a delta layer. It has been found that the rms roughness of each system correlates with the total displacement yield, a new quantity introduced in this study that follows naturally from the SS-SSM. The results indicate that the best depth profiles occur when the displacement yield is low and the sputtering yield is high. Moreover, it is determined that the expected value of the delta layer position as calculated from a depth profile rather than the peak position in the depth profile is the best indicator of the actual delta layer position.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of sample rotation on surface roughness with keV C60 bombardment in secondary ion mass spectrometry (SIMS) experiments

0009-2614/$ see front matter 2011 Elsevier B.V. A doi:10.1016/j.cplett.2011.03.003 ⇑ Corresponding author. Fax: +1 814 863 8403. E-mail addresses: [email protected], [email protected] The simplicity of interpreting depth profiling in SIMS experiments is often limited by sample damage and surface roughness that accompany the ion bombardment process. Molecular dynamics simulations are implemented to obt...

متن کامل

Gold-thiolate cluster emission from SAMs under keV ion bombardment: Experiments and molecular dynamics simulations

In this contribution the emission of gold-molecule cluster ions from self-assembled monolayers (SAMs) of alkanethiols on gold is investigated using time-of-flight secondary ion mass spectrometry (ToF-SIMS). Layers of alkanethiols [CH3(CH2)nSH] with various chain lengths (n 1⁄4 8, 12, 16) have been chosen because they form well-ordered molecular monolayers on gold. First, we compare and interpre...

متن کامل

Molecule liftoff from surfaces.

Molecular dynamics simulations have been used to model the kiloelectronvolt particle bombardment of organic layers on metal substrates such as occurs in the analytical techniques of secondary ion mass spectrometry and fast atom bombardment mass spectrometry. Vignettes of insights gained from the simulations along with comparisons to experimental data are presented in this Account. Topics includ...

متن کامل

Sputtering simulations of organic overlayers on metal substrates by monoatomic and clusters projectiles

This paper reviews our recent work on computer simulations of monoatomic and cluster bombardment of metal and organic surfaces. The investigated surfaces are irradiated with keV monoatomic (C, Ar, Ga) and polyatomic (C60) projectiles that are recognized as valuable sources for desorption of high mass particles in secondary ion and neutral mass spectrometry (SIMS/ SNMS) experiments. The analysis...

متن کامل

Damage analysis of benzene induced by keV fullerene bombardment

0168-583X/$ see front matter 2009 Elsevier B.V. doi:10.1016/j.nimb.2009.01.058 * Corresponding author. Fax: +48 12 633 7086. E-mail address: [email protected] (B Molecular dynamics computer simulations have been used to investigate the damage of a benzene crystal induced by 5 keV C20, C60, C120 and C180 fullerene bombardment. The sputtering yield, the mass distributions, and the d...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Analytical chemistry

دوره 84 6  شماره 

صفحات  -

تاریخ انتشار 2012